Formation of oxide thin films from reactions of hydrogen peroxide vapour with gas mixtures containing silane and other hydrides
- 1 January 1998
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry
- Vol. 8 (8) , 1769-1771
- https://doi.org/10.1039/a803501f
Abstract
When hydrogen peroxide vapour and silane are mixed appropriately at low pressure a self-planarising layer of silica is formed by a surface phase reaction. The effect on the reaction of replacing part of the SiH4 with GeH4, PH3 and B2H6 has now been studied. Using GeH4-SiH4 mixtures containing up to 27 GeH4, self-planarising, Ge-Si-O films, rich in germanium were obtained. Films formed by oxidising the same GeH4-SiH4 mixtures with plasma cracked water vapour were not self-planarising and contained much less germanium. The mixed oxide films from reacting PH3-SiH4 or B2H6-SiH4 mixtures with H2O2 vapour were also not self-planarising but were spectroscopically similar to known phosphosilicate or borosilicate glasses.Keywords
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