Simulation of non steady-state transport in GaAs and InP millimeter Impatt diodes
- 1 July 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (7) , 213-215
- https://doi.org/10.1109/EDL.1982.25542
Abstract
Large-signal simulations of non-stationary transport in GaAs and InP millimeter Impatt diodes have been performed. This study of the influence of non steady-state features on the performance of a 100 GHz operation shows that non punch-through structures still present interesting performances at this frequency. However, for this type of structure, InP exhibits significant advantages over GaAs for the manufacture of high efficiency diodes.Keywords
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