Transport properties of Bi nanowire arrays
- 26 June 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (26) , 3944-3946
- https://doi.org/10.1063/1.126829
Abstract
To explain various temperature-dependent resistivity measurements [R(T)] on bismuth (Bi) nanowires as a function of wire diameter down to 7 nm, a semiclassical transport model is developed, which explicitly considers anisotropic and nonparabolic carriers in cylindrical wires, and the relative importance of various scattering processes. R(T) of 40 nm Bi nanowires with various Te dopant concentrations is measured and interpreted within this theoretical framework.Keywords
This publication has 11 references indexed in Scilit:
- Electronic transport properties of single-crystal bismuth nanowire arraysPhysical Review B, 2000
- Bismuth nanowire arrays: Synthesis and galvanomagnetic propertiesPhysical Review B, 2000
- Fabrication and properties of organic and metal nanocylinders in nanoporous membranesJournal of Materials Research, 1999
- Processing and Characterization of Single-Crystalline Ultrafine Bismuth NanowiresChemistry of Materials, 1999
- Giant positive magnetoresistance of Bi nanowire arrays in high magnetic fieldsJournal of Applied Physics, 1999
- Finite-size effects in bismuth nanowiresPhysical Review B, 1998
- Magnetoresistance of bismuth nanowire arrays: A possible transition from one-dimensional to three-dimensional localizationPhysical Review B, 1998
- Magnetotransport investigations of ultrafine single-crystalline bismuth nanowire arraysApplied Physics Letters, 1998
- Structural and magneto-transport properties of electrodeposited bismuth nanowiresApplied Physics Letters, 1998
- Properties of tellurium-doped epitaxial bismuth filmsPhysical Review B, 1988