Scanning Tunneling Microscopy and Tunneling Luminescence of the Surface of GaN Films Grown by Vapor Phase Epitaxy

Preprint

14 November 1995

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9511068

Abstract

We report scanning tunneling microscopy (STM) images of surfaces of GaN films and the observation of luminescence from those films induced by highly spatially localized injection of electrons or holes using STM. This combination of scanning tunneling luminescence (STL) with STM for GaN surfaces and the ability to observe both morphology and luminescence in GaN is the first step to investigate possible correlations between surface morphology and optical properties.

Keywords

SCANNING TUNNELING MICROSCOPY
MICROSCOPY AND TUNNELING
TUNNELING LUMINESCENCE
SURFACES OF GAN
MORPHOLOGY

All Related Versions

Version 1, 1995-11-14, ArXiv
Published version: Applied Physics Letters, 68 (10), 1380.

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