n- and p-type in-plane gated field effect transistors directly written on a semi-insulating GaAs substrate
- 5 October 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (14) , 1667-1669
- https://doi.org/10.1063/1.108445
Abstract
A new type in‐plane gated field effect transistor where the semi‐insulating substrate itself is used as a gate insulator region is proposed. n‐ and p‐type in‐plane gated field effect transistors are fabricated on a semi‐insulating GaAs substrate by focused ion beam scanning of Si++ and Be++, respectively. These in‐plane gated field effect transistors are found to operate well at room temperature.Keywords
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