Tunable spin-flip Raman scattering in mercury cadmium telluride
- 1 November 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (9) , 491-493
- https://doi.org/10.1063/1.1655561
Abstract
Tunable spin‐flip Raman scattering has been observed in Hg0.766Cd0.234Te using several CO2 laser lines near 9.5 μm to pump the crystal. The Stokes component with a maximum power output of about 1 W was tunable between 15 and 68 cm−1 from the pump frequency with magnetic fields between 4 and 21 kG. This corresponds to an average tuning rate of 3.4 cm−1/kG. The extrapolated zero‐field g factor was measured to be |79|±3 yielding a conduction band‐edge effective mass ratio of 0.0101±0.0005. Several factors suggest that the tunable radiation was stimulated.Keywords
This publication has 10 references indexed in Scilit:
- A study of factors affecting the InSb c.w. spin-flip Raman laserOptics Communications, 1974
- Near-Resonance Spontaneous-Spin-Flip Light Scattering in InSbPhysical Review B, 1973
- Electronic Structure ofAlloys and Charge-Density Calculations Using RepresentativePointsPhysical Review B, 1973
- Stimulated spin-flip Raman scattering: a magnetically tunable infrared laser. IProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1972
- Nitric Oxide Air Pollution: Detection by Optoacoustic SpectroscopyScience, 1971
- Tunable Stimulated Raman Scattering from Mobile Carriers in SemiconductorsPhysical Review B, 1971
- Tunable Stimulated Raman Scattering from Conduction Electrons in InSbPhysical Review Letters, 1970
- Raman Scattering by Carriers in Landau LevelsPhysical Review B, 1966
- The magnetic moment of conduction electrons in AIII BV compoundsPhysics Letters, 1963
- Theory of Optical Magneto-Absorption Effects in SemiconductorsPhysical Review B, 1959