Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots
- 5 July 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (1) , 106-108
- https://doi.org/10.1063/1.124290
Abstract
We present cross-sectional scanning-tunneling microscopy results of threefold stacked InAs quantum dots prepared by metal-organic chemical-vapor deposition at 485 ° C and a growth rate of 0.18 nm/s. The dots consist of stoichiometrically pure InAs and show a layer-dependent size. The images indicate a prismatic dot shape with {101} and additional {111} side faces as well as a (001) top face.Keywords
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