Strong carrier freezeout above 77 K in tellurium-doped buried-channel MOS transistors
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (1) , 67-69
- https://doi.org/10.1109/t-ed.1985.21911
Abstract
Semiconductor devices are almost universally based on an assumption of full ionization of dopant impurities, a natural condition at room temperature for conventional shallow-energy-level (activation energy ∼ 0.05 eV) dopant species. At temperature T < 30 K for conventional dopants, freezeout of the equilibrium carrier density becomes severe and uncompensated dopants are in the neutral charge state. The high resistivity of such frozen-out regions might have useful applications for device structures. However, the temperature (< 30 K) required makes such applications generally impractical. Freezeout-induced high-resistivity regions at 77 K would be considerably more interesting. We demonstrate strong freezeout of a buried-channel MOS transistor at 77 K using tellurium as the channel dopant.Keywords
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