A Monte Carlo model of hot electron trapping and detrapping in SiO2

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Abstract
High‐field stressing and oxide degradation of SiO2 are studied using a microscopic model of electron heating and charge trapping and detrapping. Hot electrons lead to a charge buildup in the oxide according to the dynamic trapping‐detrapping model by Nissan‐Cohen and co‐workers [Y. Nissan‐Cohen, J. Shappir, D. Frohman‐Bentchkowsky, J. Appl. Phys. 5 8, 2252 (1985)]. Detrapping events are modeled as trap‐to‐band impact ionization processes initiated by high energy conduction electrons. The detailed electronic distribution function obtained from Monte Carlo transport simulations is utilized for the determination of the detrapping rates. We apply our microscopic model to the calculation of the flat‐band voltage shift in silicon dioxide as a function of the electric field, and we show that our model is able to reproduce the experimental results. We also compare these results to the predictions of the empirical trapping‐detrapping model which assumes a heuristic detrapping cross section. Our microscopic theory accounts for the nonlocal nature of impact ionization which leads to a dark space close to the injecting cathode, which is unaccounted for in the empirical model.