Strained InGaAs quantum well lasers with small-divergenceangles for high-power pump modules

24 November 1994

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 30 (24) , 2046-2047
https://doi.org/10.1049/el:19941403

Abstract

Epitaxial stuctures were designed for high-power strained InGaAs/AlGaAs quantum well lasers with low vertical-divergence emitting angles. The vertical divergence angles achieved were down to ~20°. High power output 1.02 µm pump modules with well-designed strained quantum well lasers have been developed for a 1.3 µm band Pr⁺-doped fibre amplifier. A maximum optical fibre output of 157 mW was obtained.

Keywords

This publication has 2 references indexed in Scilit:

Distortion and noise properties of a praseodymium-doped fluoride fiber amplifier in 1.3 /spl mu/m AM-SCM video transmission systems
IEEE Photonics Technology Letters, 1994
Low-loss laser diode module using a molded aspheric glass lens
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