The influence of cathode contacts on near-micron InP transferred electron devices
- 30 April 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (3-4) , 599-602
- https://doi.org/10.1016/0038-1101(88)90350-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Hot-electron relaxation effects in devicesSolid-State Electronics, 1978
- Computer simulation of transferred electron devices using the displaced Maxwellian approachIEEE Transactions on Electron Devices, 1974
- The Influence of Boundary Conditions on Current Instabilities in GaAsIBM Journal of Research and Development, 1969
- The Gunn effect under imperfect cathode boundary conditionsIEEE Transactions on Electron Devices, 1968