Structural and electronic properties of
- 1 July 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (1) , 483-489
- https://doi.org/10.1103/physrevb.52.483
Abstract
We have investigated the synthesis, structure, and electronic properties of by exposing preformed to N vapor. Measurements were made on bulk powders and films with a variety of techniques including in-situ x-ray diffraction and monitoring of N pressure, Raman scattering and ac susceptibility. The reaction of N with is completely reversible and leaves the charge state intact, while allowing the distance between the molecules to vary. We observe two different crystallographic structures at and . The structure is face-centered orthorhombic with a single N on the octahedral interstitial site. It is single phase at 100°C and N pressures ≥400 torr and remains single phase at 0 torr if the temperature is reduced to 25°C. Although (N) exhibits no superconductivity at ambient pressure, superconductivity can be induced by hydrostatic pressure with an onset at 28 K. The details of the structure are uncertain, however it appears that this phase is body-centered tetragonal with N on both the octahedral and tetrahedral sites. It occurs at room temperature and N pressures ≥500 torr, but is not stable at lower N pressures. Resistivity measurements of N-doped films show that the formation of the new structure results in a rapid increase of the resistivity to values exceeding 1 Ω cm.
Keywords
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