X-Ray Diffraction and Sims Studies of Mbe Grown Doping Superlattices in Silicon
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The interpretation of X-ray rocking curves from III–V semiconductor device structuresJournal of Crystal Growth, 1984
- Determination of strain distributions from X-ray Bragg reflexion by silicon single crystalsActa Crystallographica Section A, 1977
- X-Ray to Visible Wavelength RatiosPhysical Review Letters, 1973
- Densitometric and Electrical Investigation of Boron in SiliconPhysical Review B, 1955
- Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and PhosphorusPhysical Review B, 1949