GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxy
- 1 April 1984
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 2 (2) , 436-440
- https://doi.org/10.1116/1.572361
Abstract
GexSi1−x films are grown on Si by molecular beam epitaxy and analyzed by Nomarski optical interference microscopy, Rutherford ion backscattering and channeling, x-ray diffraction, and transmission electron microscopy. The full range of alloy compositions will grow smoothly on silicon. GexSi1−x films with x≤0.5 can be grown free of dislocations by means of strained-layer epitaxy where lattice mismatch is accommodated by tetragonal strain. Critical thickness and composition values are tabulated for strained-layer growth. Multiple strained layers are combined to form a GexSi1−x/Si strained-layer superlattice.Keywords
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