Interface-induced localization in AlSb/InAs heterostructures
- 15 December 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (23) , 16341-16344
- https://doi.org/10.1103/physrevb.52.16341
Abstract
The existence of localized states at perfect InSb-like interfaces in AlSb/InAs superlattices is predicted from ab initio pseudopotential calculations. Localized states are predicted in both the valence and conduction bands, the former being identifiable with the interface states proposed by Kroemer, Nguyen, and Brar [J. Vac. Sci. Technol. 10, 1769 (1990)]. The existence of these interface localized states is invoked to explain the reported experimental dependence of the band gap upon interface types in such superlattices.Keywords
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