Low threshold heterojunction AlGaAsSb/GaSb lasers in the wavelength range of 1.5 - 1.8 µm
- 1 May 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 17 (5) , 593-597
- https://doi.org/10.1109/jqe.1981.1071149
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Phase and group indices for double heterostructure lasersIEE Journal on Solidstate and Electron Devices, 1979
- Beamwidth approximations for the fundamental mode in symmetric double-heterojunction lasersIEEE Journal of Quantum Electronics, 1978
- Multicomponent solid-solution semiconductor lasersIEEE Journal of Quantum Electronics, 1977
- New uncooled injection heterolaser emitting in the 1.5–1.8 μ rangeSoviet Journal of Quantum Electronics, 1976
- Refractive index of Ga1−xAlxAsSolid State Communications, 1974
- Optimal thickness of the active layer in a heterojunction laserSoviet Journal of Quantum Electronics, 1971