ION-IMPLANTATION DAMAGE IN THIN METAL FILMS
- 1 February 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (3) , 77-80
- https://doi.org/10.1063/1.1653572
Abstract
Implantation of Ne+, P+, and As+ (45 and 90 keV, dose = 1 × 1016 cm−2) into thin films of Al, Al–Cu, and Ag produce severe damage that results in more rapid material transport during electrical stress than in unimplanted films. Resistivity ratio measurements, i. e., resistivity at 297 and 4.2 °K, appear to be sensitive indicators of this damage.Keywords
This publication has 3 references indexed in Scilit:
- Reduction of Electromigration in Aluminum Films by Copper DopingIBM Journal of Research and Development, 1970
- RESISTIVITY OF rf SPUTTER-THINNED ALUMINUM FILMSApplied Physics Letters, 1969
- DIRECT TRANSMISSION ELECTRON MICROSCOPE OBSERVATION OF ELECTROTRANSPORT IN ALUMINUM THIN FILMSApplied Physics Letters, 1967