Details of Ion Drift in an n-p Junction
- 1 July 1962
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (7) , 2353-2359
- https://doi.org/10.1063/1.1728960
Abstract
The motion of lithium in an n‐p junction under reverse bias is discussed. Expressions are derived for the distribution of lithium in the ``intrinsic'' layer as it depends on time. Results for the width of this layer agree with the earlier calculations of Pell. Information concerning this width simplifies the calculation of the detailed distribution. Thus it is convenient to combine Pell's method with ours to supply an expeditious method for arriving at the distribution. The results of the calculation indicate that the so‐called ``intrinsic'' layer produced by drift under reverse bias should be very highly compensated over most of its extent.This publication has 2 references indexed in Scilit:
- Ion Drift in an n-p JunctionJournal of Applied Physics, 1960
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949