Growth of HgBa2Ca2Cu3O8+δ thin films on LaAlO3 substrates using fast temperature ramping Hg-vapor annealing
- 29 April 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (18) , 2565-2567
- https://doi.org/10.1063/1.116185
Abstract
The fast temperature ramping Hg‐vapor annealing (FTRA) process has been used for growth of superconducting Hg‐based cuprate thin films on (100) LaAlO3 substrates. The film/substrate interface chemical reactions and the formation of a CaHgO2 impurity phase have been effectively reduced with adoption of the FTRA process. A zero‐resistance superconducting transition temperature of 128 K and critical current densities of up to 1.4×106 A/cm2 at 77 K and 2.5×105 A/cm2 at 110 K and zero field have been obtained.Keywords
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