Scanning Tunneling Microscopy Study of: An Exception to the Dimer Model
- 22 July 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 77 (4) , 691-694
- https://doi.org/10.1103/physrevlett.77.691
Abstract
We report the first atomic resolution scanning tunneling microscopy images of the surface. High resolution images were obtained for both occupied and unoccupied states. The periodicity is due to missing rows, and the periodicity to the repetition of what appear to be trimer units. It is demonstrated that the images are inconsistent with dimer-based models proposed for related semiconductor surfaces such as GaAs.
Keywords
This publication has 24 references indexed in Scilit:
- The As-terminated reconstructions formed by GaAs(001): a scanning tunnelling microscopy study of the (2 × 4) and c(4 × 4) surfacesSurface Science, 1995
- Semiconductor Surfaces and InterfacesPublished by Springer Nature ,1995
- Thirty years of atomic and electronic structure determination of surfaces of tetrahedrally coordinated compound semiconductorsSurface Science, 1994
- Surface structures of tetrahedrally coordinated semiconductors: principles, practice, and universalityApplied Surface Science, 1993
- Structure of GaAs(001)Determined by Scanning Tunneling MicroscopyPhysical Review Letters, 1988
- Surface structure of As-stabilized GaAs(001): 2×4,c(2×8), and domain structuresPhysical Review B, 1988
- Molecular-beam epitaxy growth mechanisms on GaAs(100) surfacesJournal of Vacuum Science & Technology B, 1987
- Atomic structure of GaAs(100)-(2×1) and (2×4) reconstructed surfacesJournal of Vacuum Science & Technology A, 1987
- Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculationsPhysical Review B, 1982
- Theory of polar semiconductor surfacesJournal of Vacuum Science and Technology, 1979