A physical process for 1/f noise in thin metallic films
- 1 September 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (9) , 3851-3855
- https://doi.org/10.1063/1.1661823
Abstract
The concept of power spectra for nonstationary stochastic processes is examined and a definition of ``expected power spectrum'' is employed. This allows a derivation of the spectrum for a simple process where the current arises in a conductor consisting of a collection of sites by virtue of carrier jumps. If the noise may be described by a series of noise generators associated with each volume element of the conductor we are led to a spectrum essentially in accord with the experimental observations of noise in thin films subject to a certain condition. It is shown that this condition can be satisfied if a stochastic model is chosen in which the conduction takes place by a tunnelling mechanism between small islands of conductivity.This publication has 3 references indexed in Scilit:
- Low-Frequency Variance NoiseJournal of Applied Physics, 1970
- Influence of Lower Cutoff Frequency on the Measured Variance of 1/f NoiseJournal of Applied Physics, 1969
- Some noises withI/fspectrum, a bridge between direct current and white noiseIEEE Transactions on Information Theory, 1967