Dielectric susceptibility of 〈100〉‐type paraelectric defects in varying static bias fields and simulated random stress
- 1 May 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 57 (1) , 167-174
- https://doi.org/10.1002/pssb.2220570116
Abstract
The effect of simulated random stress on the static dielectric susceptibility of 〈100〉‐type paraelectric defects with varying bias electric fields is investigated. The results are applied to the interpretation of measurements of dielectric loss due to OH − defects in K Br by Reymann and Lüty.Keywords
This publication has 5 references indexed in Scilit:
- Dielectric loss measurements on OH− dipoles in KBr with caloric techniquesPhysica Status Solidi (a), 1973
- Paraelastic Alignment of OH− Ions in RbBr and RbI1)Physica Status Solidi (b), 1972
- Strain Effects on the Tunneling Levels of KCl: LiZeitschrift für Naturforschung A, 1970
- Model Hamiltonian for Paraelectric Impurities in Alkali HalidesPhysical Review B, 1966
- Stress Dichroism and Paraelasticity of OH-Molecules in KClPhysica Status Solidi (b), 1965