Preparation of lead sulfide thin films by the atomic layer epitaxy process
- 1 January 1990
- Vol. 41 (4-6) , 1457-1459
- https://doi.org/10.1016/0042-207x(90)93989-v
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Atomic Layer EpitaxyAnnual Review of Materials Science, 1985
- Vacuum sublimation behavior of various metal chelates of 4-anilino-3-pentene-2-one, acetylacetone, dithiocarbamates, oxine and its derivatives, dimethylglyoxime, dithizone, 1-(2-pyridylazo)-2-naphthol, and tetraphenylporphyrinAnalytical Chemistry, 1978
- The structure and growth of thin films of lead sulphide condensed in vacuum on to amorphous substrates and their systematic dependence on film thickness, residual gas pressure and residual gas compositionJournal of Physics D: Applied Physics, 1978
- Photoconductive properties of chemically deposited PbS with dielectric overcoatingsJournal of Applied Physics, 1975
- Further information on the mechanism of photoconductivity in chemically deposited lead sulfide layersJournal of Applied Physics, 1972
- Fractional sublimation of various metal chelates of dipivaloylmethaneAnalytica Chimica Acta, 1972
- Mechanism of Photoconductivity in Chemically Deposited Lead Sulfide LayersJournal of Applied Physics, 1971
- EPITAXIAL LEAD SULFIDE PHOTOVOLTAIC CELLS AND PHOTOCONDUCTIVE FILMSApplied Physics Letters, 1970
- A review of the semiconductor properties of PbTe, PbSe, PbS and PbOInfrared Physics, 1969
- Photosensitivity in Epitaxial PbS FilmsJournal of Applied Physics, 1968