Relationship between grown-in defects and thermal history during CZ Si crystal growth
- 1 October 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 180 (3-4) , 363-371
- https://doi.org/10.1016/s0022-0248(97)00234-0
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski SiliconJapanese Journal of Applied Physics, 1993