Reflection properties of nanostructure-arrayed silicon surfaces

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Abstract
The reflection properties of 300 nm periodically structured silicon surfaces with depth varying between 35 and 190 nm, prepared by interference lithography, were examined in the range 200 nm<λ<3000 nm. A decrease in the reflectivity that becomes stronger with increasing structure depth is observed below 1000 nm. This broad-band reduction is caused by diffraction effects at short wavelengths and by the `moth-eye effect' at long wavelengths. The results show a universal behaviour in the optical-path to wavelength ratio dependence of the reflectivity and are in good agreement with the results obtained for the `moth-eye effect' from the effective medium theory.