Observation of Laser-Induced Melting of Silicon Film Followed by Amorphization
- 1 August 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (8A) , L1363
- https://doi.org/10.1143/jjap.29.l1363
Abstract
Transient conductance measurements were used to study laser-induced amorphization of polycrystalline silicon (poly-Si) film. A 20 nm-thick phosphorus-doped poly-Si film fabricated on a quartz substrate was melted by irradiation with a 30 ns-pulsed XeCl excimer laser. When the melt duration exceeded 70 ns, the silcon film was completely amorphized through rapid solidification. Formation of the amorphous thin film may be brought about by homogeneous solidification without crystalline nucleation.Keywords
This publication has 9 references indexed in Scilit:
- XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT'sJapanese Journal of Applied Physics, 1989
- Direct measurements of the velocity and thickness of ‘‘explosively’’ propagating buried molten layers in amorphous siliconApplied Physics Letters, 1986
- Si liquid-amorphous transition and impurity segregationApplied Physics Letters, 1985
- Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser IrradiationPhysical Review Letters, 1984
- Bulk nucleation and amorphous phase formation in highly undercooled molten siliconApplied Physics Letters, 1984
- Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser IrradiationPhysical Review Letters, 1983
- Transitions to Defective Crystal and the Amorphous State Induced in Elemental Si by Laser QuenchingPhysical Review Letters, 1982
- Picosecond laser-induced melting and resolidification morphology on SiApplied Physics Letters, 1979
- Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser IrradiationPhysical Review Letters, 1979