Reflection High-Energy Electron Diffraction Intensity Oscillations during GexSi1-x MBE Growth on Si(001) Substrates
- 1 May 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (5R)
- https://doi.org/10.1143/jjap.26.666
Abstract
Reflection high-energy electron diffraction (RHEED) intensity oscillations during the heteroepitaxy of Ge x Si1-x on a Si(001) substrate were observed for the first time. The oscillation amplitude decreased rapidly during Ge x Si1-x growth due to the three-dimensional growth, which had a strong dependence on the Ge mole fraction. The layer thickness of Ge x Si1-x /Si strained-layer superlattices was controlled precisely by monitoring the RHEED intensity oscillation. The interface roughness of Ge x Si1-x /Si heterojunctions was examined by the observations of RHEED intensity oscillations and high-resolution transmission electron microscope images.Keywords
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