Heterojunction valence-band-discontinuity dependence on face orientation
- 15 April 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (12) , 6468-6470
- https://doi.org/10.1103/physrevb.35.6468
Abstract
Band offsets for the (100), (110), (111), and (1¯ 1¯ 1¯) orientation of the GaAs-AlAs and CdTe-HgTe heterojunctions have been investigated by use of a self-consistent tight-binding method. Our results show an important face dependence for the band offsets of the CdTe-HgTe heterojunction (≊0.20 eV), although differences for the GaAs-AlAs interface are negligible. We conclude that for high-ionicity semiconductors there is a slight dependence of the charge neutrality level on the face orientation.Keywords
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