Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures

This publication has 11 references indexed in Scilit:

• Electronic structure of self-assembled InAs quantum dots in GaAs matrix
  Applied Physics Letters, 1998
• Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots
  Physical Review B, 1997
• Charging dynamics of InAs self-assembled quantum dots
  Physical Review B, 1997
• Theory of random population for quantum dots
  Physical Review B, 1997
• Shell structure and electron-electron interaction in self-assembled InAs quantum dots
  Europhysics Letters, 1996
• State filling and time-resolved photoluminescence of excited states in ${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As/GaAs self-assembled quantum dots
  Physical Review B, 1996
• Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dots
  Journal of Applied Physics, 1996
• Deep level transient spectroscopy of InP quantum dots
  Applied Physics Letters, 1995
• Electron and hole energy levels in InAs self-assembled quantum dots
  Applied Physics Letters, 1995
• The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
  Bell System Technical Journal, 1967