Landau levels near an ideal interface
- 20 August 1987
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 20 (23) , L521-L525
- https://doi.org/10.1088/0022-3719/20/23/002
Abstract
The authors show that a magnetic field parallel to a material interface generates a complex Landau level structure for a conduction electron near the interface. This is shown to result from the existence and interaction of current-carrying interface states with pseudo-bulk Landau states.Keywords
This publication has 3 references indexed in Scilit:
- Observation of magnetic levels in a superlattice with a magnetic field parallel to the layersSurface Science, 1986
- Oscillatory magnetoresistance of GaAs/GaAlAs quantum well structures under parallel magnetic fieldsSurface Science, 1984
- Quantized Hall conductance, current-carrying edge states, and the existence of extended states in a two-dimensional disordered potentialPhysical Review B, 1982