Theoretical modeling of long wavelength n+-on-p HgCdTe photodiodes
- 15 August 1996
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (4) , 2483-2489
- https://doi.org/10.1063/1.363084
Abstract
The performance of long wavelength infrared high quality n+‐on‐p HgCdTe photodiodes is reexamined theoretically. It is shown that the performance can be explained taking into account only thermal generation governed by the Auger mechanism. The investigations are carried out for photodiodes operated in a temperature range between 300 and 50 K. The effect of doping profiles on the photodiode parameters (R0A product, I–V characteristic, photoelectrical gain and noise) is solved by forward‐condition steady‐state analysis. The theoretical predictions of photodiode parameters are compared with experimental data obtained at the Laboratoire d’Electronique de Technologie et d’Instrumentation (Grenoble, France). Excellent agreement between both types of results has been achieved.This publication has 30 references indexed in Scilit:
- Molecular beam epitaxy HgCdTe infrared photovoltaic detectorsOptical Engineering, 1994
- The impact of characterization techniques on HgCdTe infrared detector technologySemiconductor Science and Technology, 1993
- Planar p-on-n HgCdTe heterostructure photovoltaic detectorsApplied Physics Letters, 1993
- Mercury cadmium telluride junctions grown by liquid phase epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Growth and characterization of P-on-n HgCdTe liquid-phase epitaxy heterojunction material for 11–18 μm applicationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Molecular-beam epitaxy growth and i n s i t u arsenic doping of p-on-n HgCdTe heterojunctionsJournal of Applied Physics, 1991
- P-on-n arsenic-activated junctions in MOCVD LWIR HgCdTe/GaAsSemiconductor Science and Technology, 1990
- Long and middle wavelength infrared photodiodes fabricated with Hg1−x CdxTe grown by molecular-beam epitaxyJournal of Applied Physics, 1989
- Calculation of the Auger lifetime in p-type Hg1-xCdxTeJournal of Applied Physics, 1981
- A comparison of the dominant Auger transitions in p-type (Hg,Cd)TeSolid State Communications, 1980