Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers
- 3 August 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 174 (1-3) , 666-670
- https://doi.org/10.1016/0039-6028(86)90489-9
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 4 references indexed in Scilit:
- Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperatureJournal of Applied Physics, 1984
- Epitaxial Growth of Ge Films onto CaF2/Si StructuresJapanese Journal of Applied Physics, 1982
- Epitaxial Growth of SOS Films with Amorphous Si Buffer LayerJapanese Journal of Applied Physics, 1981
- Electrical Properties of Epitaxial Ge Films Deposited on (111) CaF2 SubstratesJournal of Applied Physics, 1967