Metallicepitaxial films on Si(111)
- 15 February 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (5) , 2618-2621
- https://doi.org/10.1103/physrevb.37.2618
Abstract
The growth of high-quality epitaxial films on Si(111) is described along with a determination of the silicide atomic structure and the structure of the /Si interface. These films constitute the first example of an epitaxial non-transition-metal silicide. The lack of d electrons and the large difference in electronegativity between Ca and Si promise to endow epitaxial calcium silicide and the silicide-silicon interface with intriguingly different electronic properties from the thoroughly studied transition-metal silicides.
Keywords
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