Theoretical approach to the spin-dependent hot-electron transport in a spin valve

Publisher Website
Google Scholar
Abstract
We analyzed spin-dependent hot-electron transport in a spin-valve transistor, by calculating current-voltage characteristics for a simplified three-terminal structure. The calculation was performed by using the Liouville equation for the Wigner distribution function. We found that the effect of impurity scattering on the current-voltage characteristics is enhanced by the multiple-reflection between the barriers at the emitter/base and at the base/collector interfaces. It was suggested that the large magnetoresistance ratio observed in the spin-valve transistor could be understood by taking into account not only the spin asymmetry in the density of states but also the enhanced impurity scattering and a forward-focusing effect of the tunneling barriers.