Planar self-aligned ion-implanted InP MOSFET
- 10 June 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (12) , 534-536
- https://doi.org/10.1049/el:19820362
Abstract
n-channel enhancement-mode InP MOSFETs have been fabricated on Fe-doped semi-insulating material using a planar self-aligned Mo gate process with ion-implanted source and drain contact regions. These devices showed high mobilities up to 2400 cm2/Vs and excellent uniformity and stability.Keywords
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