A wide band distributed dual gate HEMT mixer
- 6 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 173-176
- https://doi.org/10.1109/gaas.1988.11051
Abstract
The authors present the systematic design, fabrication, and evaluation of a distributed wideband monolithic mixer using dual-gate HEMTs (high-electron-mobility transistors). The circuit was fabricated on an Al-GaAs-GaAs heterostructure wafer. The measurement results show that the mixer operates from 5 to 18 GHz with a conversion loss from 3 to 5 dB. This is believed to be the first reported wideband distributed mixer using dual-gate HEMT devices. The mixer chips developed are key components for EW (electronic warfare) applications.Keywords
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