Inverted gate GaAs MESFET by epitaxial liftoff
- 9 April 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (8) , 708-709
- https://doi.org/10.1049/el:19920448
Abstract
A GaAs film deposited on metal by epitaxial liftoff can form a Schottky barrier. This film is used make a 1μm gate length inverted gate GaAs metal-semiconductor field-effect transistor (MESFET) that can be pinched off by the inverted gate.Keywords
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