Pseudoptential theory of shallow-donor ground states. II
- 15 June 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 11 (12) , 5043-5052
- https://doi.org/10.1103/physrevb.11.5043
Abstract
A pseudopotential calculation is done for the ground states of the shallow donors N, P, As, Sb, and Bi in Si. The pseudopotential is screened linearly. Good results are obtained for As, the one impurity for which the size effect is small. It is argued that deformation of the lattice cannot account for the size effect. However, accounting for the size effect by compressing the impurity core gives wave functions for which the calculated values of agree well with experiment. In addition, most of the electron-nuclear-double-resonance lines are identified for P, As, and Sb impurities.
Keywords
This publication has 25 references indexed in Scilit:
- Theory of localized states in semiconductors. II. The pseudo impurity theory application to shallow and deep donors in siliconPhysical Review B, 1974
- Analysis of the Fermi-contact interactions of the shallow-donor electron in phosphorus-doped siliconPhysical Review B, 1974
- Pseudopotential Theory of Shallow-Donor Ground StatesPhysical Review B, 1973
- Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and GermaniumPhysical Review B, 1969
- Shallow Donor Electrons in Silicon. I. Hyperfine Interactions from ENDOR MeasurementsPhysical Review B, 1969
- Effective Mass Approximation for Acceptor States in SiliconPhysica Status Solidi (b), 1969
- Shallow Donor Potential in SiliconJournal of the Physics Society Japan, 1966
- Wave functions and energies of shallow acceptor states in germaniumJournal of Physics and Chemistry of Solids, 1964
- Theory of shallow acceptor states in Si and GeJournal of Physics and Chemistry of Solids, 1962
- Theory of Donor States in SiliconPhysical Review B, 1955