Vertical versus horizontal reactor: An optical study of the gas phase in a MOCVD reactor
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 144-150
- https://doi.org/10.1016/0022-0248(86)90294-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- On the effect of carrier gas on growth conditions in MOCVD reactors; Raman study of local temperatureJournal of Crystal Growth, 1984
- Emergence of a periodic mode in the so-called turbulent region in a circular Couette flowJournal de Physique Lettres, 1982
- Thermophoresis of particles in a heated boundary layerJournal of Fluid Mechanics, 1980
- A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal ReactorJournal of the Electrochemical Society, 1970