Mathematical 2-dimensional model of semiconductor devices

28 January 1971

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 7 (2) , 47-50
https://doi.org/10.1049/el:19710033

Abstract

An iterative process for the research of the solution of the 2-dimensional semiconductor transport equations system is presented. It is possible, with this process, to obtain the values of potential, hole and electron concentrations at all points of the device for any polarisation value.

Keywords

SEMICONDUCTOR DEVICE MODELS
ITERATIVE PROCESS
HOLE CONCENTRATION
POLARISATION VALUE
TWO DIMENSIONAL SEMICONDUCTOR TRANSPORT EQUATIONS
ELECTRON CONCENTRATION
ELECTROSTATIC POTENTIAL

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