THE INFLUENCE OF IMPURITIES ON THE GROWTH OF SILICON CARBIDE CRYSTALS GROWN BY GAS-PHASE REACTIONS
- 1 January 1969
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Vapor-liquid-solid and melt growth of silicon carbideJournal of Crystal Growth, 1967
- Growth, Luminescence, Selection Rules, and Lattice Sums of SiC with Wurtzite StructurePhysical Review B, 1966
- Stabilization of cubic silicon carbideJournal of Physics and Chemistry of Solids, 1965
- Nitrogen Incorporation in SiCThe Journal of Chemical Physics, 1965
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964