Two-phonon absorption in InSb, InAs, and GaAs

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Abstract
Far-infrared absorption in the III–V compound semiconductors InSb, InAs, and GaAs has been measured using a Fourier transform spectrometer. The high-resolution spectra of the three materials were found to be very similar. Features on the spectra were assigned to two-phonon sum and difference processes with the aid of two-phonon density-of-states curves for InSb and GaAs calculated from a shell model fit to phonon dispersion curves. Interpretation of the spectrum of InAs was possible because of its similarity to that of InSb and GaAs. The frequencies of phonons at certain points in the Brillouin zone of InSb and GaAs determined from the mode assignments to the infrared spectra were in good agreement with previous measurements by inelastic neutron scattering and Raman scattering.

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