Analysis of the hysteresis in the I-V characteristics of vertically integrated, multipeaked resonant-tunneling diodes

1 September 1990

journal article
letter
Published by AIP Publishing in Journal of Applied Physics

Vol. 68 (5) , 2496-2498
https://doi.org/10.1063/1.346513

Abstract

The hysteresis (extrinsic) and current‐voltage (I‐V) characteristics of the multiwell, vertically integrated, resonant‐tunneling diode are analyzed. Our analysis shows that hysteresis in the vertically integrated diode I‐V can result from interchanging the order in which the devices switch, depending if the bias is increasing or decreasing. Experimental results are presented that support this analysis.

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