Computer simulations have been done to show how planar channeling of high-energy ions in compound semiconductor superlattices offers a further means of studying structure at the interfaces in these materials. Such a technique will supplement earlier work with axial channeling concerning offsets at the interfaces in rows of atoms inclined to the surface normal. The method involves having the interface at a depth of 10–20 nm and adjusting the ion energy so that the ions travel about one quarter wavelength in reaching the interface. The tilt angle of the beam relative to the planar channel can be varied to sweep the beam across the channel and make a precise determination of the offset position. This procedure can provide a confirmation of the offset and a more accurate determination of its size.