Consideration of age degradation in the RF performance of CMOS radio chips for high volume manufacturing
- 10 August 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- On the degradation of p-MOSFETs in analog and RF circuits under inhomogeneous negative bias temperature stressPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technologyIEEE Transactions on Microwave Theory and Techniques, 2001