Fine structure in the field effect mobility of MOS transistors

This publication has 3 references indexed in Scilit:

• Admittance studies of surface quantization in [100]-oriented Si metal-oxide-semiconductor field-effect transistors
  Physical Review B, 1974
• Peaked structure in field-effect mobility of silicon MOS transistors at very low temperatures
  Applied Physics Letters, 1973
• Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
  Physical Review B, 1967