InGaAs/InP waveguide photodetector with high saturation intensity
- 19 November 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (24) , 2258-2259
- https://doi.org/10.1049/el:19921452
Abstract
An InGaAs/InP rib-loaded waveguide pin, photodetector integrated with a microwave coplanar waveguide transmission line on a semi-insulating InP substrate is demonstrated. The detector has a 3 dB frequency response in excess of 20 GHz. The DC responsivity of the waveguide photo-detector remains constant at 0.21 A/W over a range of incident optical powers from 400 μW to 20 mW.Keywords
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