Plasma Edge in Bi2Te3
- 1 September 1963
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (9) , 2754-2756
- https://doi.org/10.1063/1.1729805
Abstract
The reflectance minima associated with the free carrier plasma edges in p‐ and n‐type Bi2Te3 have been observed at 78° and 300°K. The data together with the measured Hall and Seebeck coefficients have yielded combined band structure‐relaxation time parameters when proper account is taken of the anisotropy. These are compared with the results of other experiments from which similar information has been obtained. For n‐type Bi2Te3 fair agreement is found with galvanomagnetic and optical band structure determinations. For p‐type material the agreement with the results of similar experiments is considerably poorer but recent de Haas—van Alphen and galvanomagnetic measurements have established the value of the parameter measured in this experiment to within approximately the experimental error.This publication has 8 references indexed in Scilit:
- The optical properties of p-type Bi2Te3Sb2Te3 alloys between 2–15 micronsJournal of Physics and Chemistry of Solids, 1962
- Transport properties of p-type Bi2Te3Sb2Te3 alloys in the temperature range 80–370°KJournal of Physics and Chemistry of Solids, 1962
- Recent Studies of Bismuth Telluride and Its AlloysJournal of Applied Physics, 1961
- Infra-red Faraday Rotation and Free Carrier Absorption in Bi2Te3Proceedings of the Physical Society, 1960
- The Faraday Effect in Anisotropic SemiconductorsJournal of Electronics and Control, 1959
- Galvanomagnetic Effects in p-Type Bismuth TellurideProceedings of the Physical Society, 1958
- Galvanomagnetic Effects in n-Type Bismuth TellurideProceedings of the Physical Society, 1958
- Anisotropic Galvanomagnetic Effects in SemiconductorsProceedings of the Physical Society. Section B, 1956