Bestimmung der Dichte und des Einfangauerschnittes von Oberflächenzuständen mit dem Oberflächenladungspumpeffekt
- 16 December 1977
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 44 (2) , K117-K121
- https://doi.org/10.1002/pssa.2210440251
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Ladungsträgereinfang in MOS-Strukturen mit externer MinoritätsträgerquellePhysica Status Solidi (a), 1975
- Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurementsSurface Science, 1971
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970
- Charge pumping in MOS devicesIEEE Transactions on Electron Devices, 1969
- Surface recombination in semiconductorsSurface Science, 1968
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditionsSolid-State Electronics, 1966