MOCVD Growth of High-Quality InN Films and Raman Characterization of Residual Stress Effects
- 5 November 2001
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 228 (1) , 1-4
- https://doi.org/10.1002/1521-3951(200111)228:1<1::aid-pssb1>3.0.co;2-u
Abstract
No abstract availableKeywords
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